PECVD&ALD System

▪ Composition of one process Chamber
▪ Substrate Heating Max600℃
▪ Substrate & Pin up-down kit
▪ Gas Shower head 8"
▪ Plasma Source ~1kw at 13.56MHz
▪ Sample holder 6"
▪ Operation Pressure : 100mTorr~500mtorr
▪ Gas control : MFC(PN2,SiH4,B2H6,H2,SF6,O2,Ar)
▪ APC Valve
▪ Deposition : SiN,SiO2,a-Si
▪ System control & operation module
▪ Auto process control
▪ PC & LCD monitor
▪ Electrical power drive panel box
▪ PM Dry pump : 1set(>10,000 l/min)
▪ L/L rotary pump : 1set(> 600 l/min)
▪ sol valve,manipolder,Air pressiure
▪ Water Distributor,water flow sensor